Micross 1Gb magnetoresistive RAM (MRAM) component is packaged in 18 x 20mm ceramic land-grid array and ball-grid array formats.

SRAM-compatible interface. Resists harsh environments. Avalanche's STT-MRAM tech powering Micross has dropped to 22nm process node. Offers more than 64x density of 16Mb MRAM, with bit density per mm² of 2.844Mb. Available in standard, radiation-tolerant, and radiation-hardened variants. Offers 10 years of data retention across a -40°C to +125°C temp. range and 45ns access time across its op. temp.


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