LEUVEN, BELGIUM – Imec reported new advances in ferroelectric memory technology, demonstrating low-voltage ferroelectric capacitors and vertically stacked ferroelectric field-effect transistors (FeFETs) designed to support the growing memory demands of AI and data-intensive computing.

Presented at the 2026 IEEE/JSAP Symposium on VLSI Technology & Circuits, the research targets alternatives to conventional DRAM and SRAM, which are approaching scaling limitations as AI workloads require greater memory capacity, bandwidth and energy efficiency.

Imec demonstrated ferroelectric capacitors operating at approximately 1.3V while maintaining remnant polarization above 40 μC/cm² and endurance exceeding 10¹³ cycles. The research organization also reported the first functional five-word-line vertical stack of IGZO-based FeFET memory cells on 300mm wafers, a development aimed at increasing memory density through 3D integration.

The work combines advances in materials engineering, device architecture and 3D integration to explore scalable memory technologies capable of supporting future AI infrastructure and next-generation computing platforms.

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